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EUR50.40
EUR72.40

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LK2960 Insulated gate bipolar transistor IGBT Toshiba MG200J2YS45 LE4-116-DD1 ist er ideal für den

SKU: 33080941477

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Description

ist er ideal für den Einsatz in anspruchsvollen Industrieanwendungen

Optimized energy efficiency: With a operating range of 22-26V and a power consumption of only 250mA

die Wert auf Präzision und Leistung legen

High reliability: This board was stored as a spare part and thus guarantees first -class functionality and durability

the PP7437 offers Siemens 6SC6502-4AA02 D380-D430/20 462 503

LK2960 Insulated gate bipolar transistor IGBT Toshiba MG200J2YS45 LE4-116-DD1 ist er ideal für denThe LK2960 Insulated Gate Bipolar Transistor (IGBT) from Toshiba, Model MG200J2YS45, is an excellent choice for industrial applications that require reliable performance and efficiency. This IGBT used comes from a device dismantling and was in operation until it was expanded, which underlines its quality and functionality. High performance: Designed for high electricity and voltage applications, this IGBT offers optimal performance parameters.

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